Veuillez utiliser cette adresse pour citer ce document : https://di.univ-blida.dz/jspui/handle/123456789/10309
Titre: Study of multiple quantum dots structures based on InGaN/GaN semiconductor for photovoltaic cell
Auteur(s): Aissaoui, Youcef
Boulahchiche, Rafik
Mots-clés: Quantum dots; Solar cells; Semiconductor; Bandgap energy.
Date de publication: 2020
Editeur: Blida1
Résumé: In this work, we were interested about the study, the simulation and themodelingof(InGaN/GaN) quantum dots solar cells. This ternary alloy who is an III-V semiconductor present an important characteristic especially its band-gap energy which is in a direct form. We had also studied a different parameter characterized the solar cells where the performances were realized thanks to the software Silvaco TCAD. The results obtained were compared to determine the best structure.
Description: 4.621.1.907 ;71 p ;illustré
URI/URL: http://di.univ-blida.dz:8080/jspui/handle/123456789/10309
Collection(s) :Mémoires de Master

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