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https://di.univ-blida.dz/jspui/handle/123456789/10309
Titre: | Study of multiple quantum dots structures based on InGaN/GaN semiconductor for photovoltaic cell |
Auteur(s): | Aissaoui, Youcef Boulahchiche, Rafik |
Mots-clés: | Quantum dots; Solar cells; Semiconductor; Bandgap energy. |
Date de publication: | 2020 |
Editeur: | Blida1 |
Résumé: | In this work, we were interested about the study, the simulation and themodelingof(InGaN/GaN) quantum dots solar cells. This ternary alloy who is an III-V semiconductor present an important characteristic especially its band-gap energy which is in a direct form. We had also studied a different parameter characterized the solar cells where the performances were realized thanks to the software Silvaco TCAD. The results obtained were compared to determine the best structure. |
Description: | 4.621.1.907 ;71 p ;illustré |
URI/URL: | http://di.univ-blida.dz:8080/jspui/handle/123456789/10309 |
Collection(s) : | Mémoires de Master |
Fichier(s) constituant ce document :
Fichier | Description | Taille | Format | |
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These InGaN PV (english)(1).pdf | 3,11 MB | Adobe PDF | Voir/Ouvrir |
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