Etude par TCAD-Silvaco d'une structure n-on-p dans le cadre du projet ATLAS du CERN.

Abstract

We studied a detector n-on-p silicon with guard rings designed for high luminosity application. The electrical performance of this detector were evaluated using the Silvaco TCAD tools software Simulation by varying the substrate parameters (thickness, doping), guard rings (junction depth, doping), and silicon oxide (thickness, charge). When the thickness of the substrate decreases, the breakdown voltage decreases. Regarding the guard rings, their doping has no influence on the the breakdown voltage while an increase in junction depth causes a drop in breakdown voltage. For the oxide, the change in thickness does not influence the breakdown voltage of the structure. However, when the quantity of the charge present in the oxide increases, the breakdown voltage increases and then reaches a peak then it relapse