Thickness effect on post annealed vanadium oxide thin films deposited by thermal evaporation technique

Abstract

In this Study, vanadium oxide thin films are prepared by thermal evaporation technique deposited on glass and silicon substrates, the V 2 O 5 powder mass was varied from 15mg , 25mg, 50mg to 70mg to realise a different layer’s thicknes. The films are electrically studied by bolometer to determine TCR (Temperature coefficient of resistance) for different thickness before annealing, then the films were annealed under temperature of 400°C for 5 min to obtain another electrical results and to obtain others values of TCR with annealing assess. Finally the annealed thin films was structurally studied to guess the different oxide vanadium phases for each thickness.