Study of multiple quantum dots structures based on InGaN/GaN  semiconductor for photovoltaic cell

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Élément Dublin Core	Valeur	Langue
dc.contributor.author	Aissaoui, Youcef	-
dc.contributor.author	Boulahchiche, Rafik	-
dc.date.accessioned	2021-03-04T09:29:22Z	-
dc.date.available	2021-03-04T09:29:22Z	-
dc.date.issued	2020	-
dc.identifier.uri	http://di.univ-blida.dz:8080/jspui/handle/123456789/10309	-
dc.description	4.621.1.907 ;71 p ;illustré	fr_FR
dc.description.abstract	In this work, we were interested about the study, the simulation and themodelingof(InGaN/GaN) quantum dots solar cells. This ternary alloy who is an III-V semiconductor present an important characteristic especially its band-gap energy which is in a direct form. We had also studied a different parameter characterized the solar cells where the performances were realized thanks to the software Silvaco TCAD. The results obtained were compared to determine the best structure.	fr_FR
dc.language.iso	en	fr_FR
dc.publisher	Blida1	fr_FR
dc.subject	Quantum dots; Solar cells; Semiconductor; Bandgap energy.	fr_FR
dc.title	Study of multiple quantum dots structures based on InGaN/GaN semiconductor for photovoltaic cell	fr_FR
Collection(s) :	Mémoires de Master

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