Etude et simulation des boites quantiques à base de InAs/GaAs

Abstract

:This work concerns with the study and simulation of well, ware and quantum dots structure, the structure that we have considered is GaAs/InAs/GaAs, the method used in the simulation is the final elements method we have determined the porters quantification energy, the presence probability, the transition energy and emission wave length for the three previous structure, the structure dimensions influence that has been studied and the simulation results prove that they an important role.