Résumé:
Modern radar systems impose stringent performance requirements, particularly concerning high output
power and low noise in high-frequency applications. In this context, this work is dedicated to the in-depth
study and simulation of a low-noise amplifier (LNA) optimized for these applications, relying on the
integration of microstrip lines to enhance the performance of this LNA. A major focus of this research is
the exploitation of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), renowned for their
superior electrical properties and exceptional high-frequency performance. The work encompasses a
detailed analysis of GaN HEMT characteristics, the innovative design of the low-noise amplifier, as well as
an exhaustive investigation into the effects of microstrip lines on performance. Simulation results
demonstrate a significant improvement in performance through the implementation of these cuttingedge
technologies,
thereby
considerably
enhancing
the
efficiency
and
reliability
of
radar
systems.
