Résumé:
In this Study, vanadium oxide thin films are prepared by thermal evaporation
technique deposited on glass and silicon substrates, the V
2
O
5
powder mass was
varied from 15mg , 25mg, 50mg to 70mg to realise a different layer’s thicknes. The
films are electrically studied by bolometer to determine TCR (Temperature coefficient
of resistance) for different thickness before annealing, then the films were annealed
under temperature of 400°C for 5 min to obtain another electrical results and to
obtain others values of TCR with annealing assess. Finally the annealed thin films
was structurally studied to guess the different oxide vanadium phases for each
thickness.