Amélioration, conception et simulation sur ADS d'un amplificateur distribué en cascade utilisé dans une chaine de réception Radar aux micro-ruban avec un transistor HEMT large signal

Abstract

Modern radar systems impose stringent performance requirements, particularly concerning high output power and low noise in high-frequency applications. In this context, this work is dedicated to the in-depth study and simulation of a low-noise amplifier (LNA) optimized for these applications, relying on the integration of microstrip lines to enhance the performance of this LNA. A major focus of this research is the exploitation of Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), renowned for their superior electrical properties and exceptional high-frequency performance. The work encompasses a detailed analysis of GaN HEMT characteristics, the innovative design of the low-noise amplifier, as well as an exhaustive investigation into the effects of microstrip lines on performance. Simulation results demonstrate a significant improvement in performance through the implementation of these cuttingedge technologies, thereby considerably enhancing the efficiency and reliability of radar systems.