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dc.contributor.author |
Aissaoui, Youcef |
|
dc.contributor.author |
Boulahchiche, Rafik |
|
dc.date.accessioned |
2021-03-04T09:29:22Z |
|
dc.date.available |
2021-03-04T09:29:22Z |
|
dc.date.issued |
2020 |
|
dc.identifier.uri |
http://di.univ-blida.dz:8080/jspui/handle/123456789/10309 |
|
dc.description |
4.621.1.907 ;71 p ;illustré |
fr_FR |
dc.description.abstract |
In this work, we were interested about the study, the simulation and
themodelingof(InGaN/GaN) quantum dots solar cells. This ternary alloy who is an III-V
semiconductor present an important characteristic especially its band-gap energy which is in
a direct form. We had also studied a different parameter characterized the solar cells where
the performances were realized thanks to the software Silvaco TCAD. The results obtained
were compared to determine the best structure. |
fr_FR |
dc.language.iso |
en |
fr_FR |
dc.publisher |
Blida1 |
fr_FR |
dc.subject |
Quantum dots; Solar cells; Semiconductor; Bandgap energy. |
fr_FR |
dc.title |
Study of multiple quantum dots structures based on InGaN/GaN semiconductor for photovoltaic cell |
fr_FR |
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